features ? high collector current ? high current gain marking :ff m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 40 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 10 v i c collector current 50 0 m a p c collector power dissipation 300 m w r ja thermal resistance from j u nction to a mbient 416 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 00 a, i e =0 40 v collector - emitter breakdown voltage v (br) c e o i c = 1 0 ma, i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 10 v collector cut - off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 0.1 a h fe (1) v ce = 1 v, i c = 1 00 a 4000 h fe (2) v ce = 5 v, i c = 1 0 ma 10000 h fe (3) v ce = 5 v, i c = 1 00 ma 20000 dc current gain h fe (4) v ce = 5 v, i c = 0.5 a 4000 collector - emitter saturation voltage v ce(sat) i c = 100 ma, i b = 0.1 ma 1 v b ase - emitter saturation voltage v b e(sat) i c = 100 ma, i b = 0.1 ma 1.5 v transition frequency f t v ce = 5 v,i c = 50 ma , f=1 00 mhz 170 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 3.5 pf so t C 23 1. base 2. emitter 3. collector BCV27 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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